Datasheet LM4040 (Diodes) - 2

ManufacturerDiodes
DescriptionPrecision Micropower Shunt Voltage References
Pages / Page16 / 2 — LM4040. Absolute Maximum Ratings. Parameter. Rating. Unit. Package …
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LM4040. Absolute Maximum Ratings. Parameter. Rating. Unit. Package Thermal Data. Package. DIS. TA = +25°C, TJ = +125°C

LM4040 Absolute Maximum Ratings Parameter Rating Unit Package Thermal Data Package DIS TA = +25°C, TJ = +125°C

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LM4040 Absolute Maximum Ratings
(Voltages to Anode Unless Otherwise Stated)
Parameter Rating Unit
Continuous Reverse Current 20 mA Continuous Forward Current 10 mA Operating Junction Temperature -40 to +150 °C Storage Temperature -55 to +150 °C Caution: Stresses greater than the Absolute Maximum Ratings specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at conditions between maximum recommended operating conditions and absolute maximum ratings is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. (Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.) Unless otherwise stated voltages specified are relative to the Anode pin.
Package Thermal Data P Package θ DIS JA TA = +25°C, TJ = +125°C
SOT23 380°C/W 330mW
Recommended Operating Conditions Parameter Min Max Unit
Reverse Current 0.06 15 mA Operating Ambient Temperature Range -40 +125 °C
Electrical Characteristics
(Test conditions: TA = +25°C, unless otherwise specified.)
LM4040-25 Conditions Symbol Parameter Typ LM4040 LM4040 LM4040 B Limits C Limits D Limits Unit

TA
Reverse Breakdown Voltage IR = 100µA +25°C 2.5 — — — V V +25°C ±5 ±12 ±25 REF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±21 ±29 ±49 mV -40 to +125°C ±30 ±38 ±63 +25°C 45 60 60 65 IRMIN Minimum Operating Current — -40 to +85°C µA — 65 65 70 -40 to +125°C 68 68 73 IR = 10mA ±20 — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±15 ±100 ±100 ±150 ppm/°C IR = 100µA ±15 — — — +25°C 0.3 0.8 0.8 1.0 IRMIN ≤ IR ≤ 1mA -40 to +85°C — 1.0 1.0 1.2 -40 to +125°C 1.0 1.0 1.2 ΔVR/ΔIR Reverse Breakdown Change with Current mV +25°C 2.5 6.0 6.0 8.0 1mA ≤ IR ≤ 15mA -40 to +85°C — 8.0 8.0 10.0 -40 to +125°C 8.0 8.0 10.0 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz 0.3 0.8 0.9 1.1 Ω IAC = 0.1IR en Noise Voltage IR = 100µA 10Hz < f < 10kHz 35 — — — µVRMS VR Long Term Stability (Non Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to +125°C 0.08 — — — % LM4040 2 of 16 August 2019 Document number: DS33195 Rev. 8 - 2
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