Datasheet SSA24 (Vishay)

ManufacturerVishay
DescriptionHigh Current Density Surface-Mount Schottky Rectifier
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SSA23L, SSA24. High Current Density Surface-Mount Schottky Rectifier. FEATURES. SMA (DO-214AC). LINKS TO ADDITIONAL RESOURCES

Datasheet SSA24 Vishay

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SSA23L, SSA24
www.vishay.com Vishay General Semiconductor
High Current Density Surface-Mount Schottky Rectifier FEATURES
• Low profile package Available • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High surge capability
SMA (DO-214AC)
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available Cathode Anode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS D 3 3 D
For use in low voltage high frequency inverters, 3D Models freewheeling, DC/DC converters, and polarity protection applications.
PRIMARY CHARACTERISTICS MECHANICAL DATA
IF(AV) 2.0 A
Case:
SMA (DO-214AC) VRRM 30 V, 40 V Molding compound meets UL 94 V-0 flammability rating IFSM 60 A Base P/N-E3 - RoHS-compliant, commercial grade EAS 11.25 mJ Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified VF 0.38 V, 0.42 V (“_X” denotes revision code e.g. A, B,...) TJ max. 150 °C
Terminals:
matte tin plated leads, solderable per Package SMA (DO-214AC) J-STD-002 and JESD 22-B102 Circuit configuration Single E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
color band denotes cathode end
MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL SSA23L SSA24 UNIT
Device marking code 23L S24 V Maximum repetitive peak reverse voltage VRRM 30 40 V Maximum RMS voltage VRMS 21 28 V Maximum DC blocking voltage VDC 30 40 V Maximum average forward rectified current at TL (fig. 1) IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine-wave I superimposed on rated load FSM 60 A Non-repetitive avalanche energy at TA = 25 °C, IAS = 1.5 A, L = 10 mH EAS 11.25 mJ Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction temperature range TJ -65 to +150 °C Storage temperature range TSTG -65 to +150 °C Revision: 23-Apr-2020
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Document Number: 88882 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000