Datasheet BF998, BF998R - 3
| Description | Silicon N-channel dual-gate MOS-FETs |
| Pages / Page | 15 / 3 — LIMITING VALUES. SYMBOL. PARAMETER. CONDITIONS. MIN. MAX. UNIT. Notes |
| File Format / Size | PDF / 286 Kb |
| Document Language | English |
LIMITING VALUES. SYMBOL. PARAMETER. CONDITIONS. MIN. MAX. UNIT. Notes
Model Line for this Datasheet
Text Version of Document
link to page 3 link to page 3 link to page 3 link to page 3 link to page 3 link to page 3 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 12 V ID drain current 30 mA IG1 gate 1 current 10 mA IG2 gate 2 current 10 mA Ptot total power dissipation; BF998 up to Tamb = 60 C; see Fig.3; note 1 200 mW up to Tamb = 50 C; see Fig.3; note 2 200 mW Ptot total power dissipation; BF998R up to Tamb = 50 C; see Fig.4; note 1 200 mW Tstg storage temperature 65 +150 C Tj operating junction temperature 150 C
Notes
1. Device mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm. 2. Device mounted on a printed-circuit board. MLA198 MGA002 handbook, halfpage handbook, halfpage 200 200 P (2) (1) P tot max tot max (mW) (mW) 100 100 0 0 0 100 200 0 100 200 T T amb ( C) o amb (°C) (1) Ceramic substrate. (2) Printed-circuit board. Fig.3 Power derating curves; BF998. Fig.4 Power derating curve; BF998R. 1996 Aug 01 3 Document Outline Features Applications Description Pinning Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outlines Data sheet status Definitions Disclaimers
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 12 V ID drain current 30 mA IG1 gate 1 current 10 mA IG2 gate 2 current 10 mA Ptot total power dissipation; BF998 up to Tamb = 60 C; see Fig.3; note 1 200 mW up to Tamb = 50 C; see Fig.3; note 2 200 mW Ptot total power dissipation; BF998R up to Tamb = 50 C; see Fig.4; note 1 200 mW Tstg storage temperature 65 +150 C Tj operating junction temperature 150 C
Notes
1. Device mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm. 2. Device mounted on a printed-circuit board. MLA198 MGA002 handbook, halfpage handbook, halfpage 200 200 P (2) (1) P tot max tot max (mW) (mW) 100 100 0 0 0 100 200 0 100 200 T T amb ( C) o amb (°C) (1) Ceramic substrate. (2) Printed-circuit board. Fig.3 Power derating curves; BF998. Fig.4 Power derating curve; BF998R. 1996 Aug 01 3 Document Outline Features Applications Description Pinning Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outlines Data sheet status Definitions Disclaimers
