Datasheet BF998, BF998R - 5

NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R MGE813 MGE815 24 24 handbook, halfpage I handbook, halfpage I D D V 3 V (mA) G1-S = (mA) VG2-S = 4 V 2 V 20 0.4 V 20 1 V 0.3 V 16 16 0.2 V 0.1 V 12 12 0 V 8 −0.1 V 8 −0.2 V 0 V 4 − 4 0.3 V −0.4 V −0.5 V 0 0 0 2 4 6 8 10 −1 0 1 VG1 (V) VDS (V) VG2-S = 4 V; Tamb = 25 C. VDS = 8 V; Tamb = 25 C. Fig.5 Output characteristics; typical values. Fig.6 Transfer characteristics; typical values. MGE814 MGE811 24 30 handbook, halfpage ID handbook, halfpage 4 V |y (mA) fs| 3 V max typ (mS) 20 2 V 24 1 V 16 18 12 min 12 8 6 4 V 0.5 V G2-S = 0 V 0 0 −1600 −1200 −800 −400 0 400 0 4 8 12 16 20 VG1 (mV) ID (mA) VDS = 8 V; VG2-S = 4 V; Tamb = 25 C. VDS = 8 V; Tamb = 25 C. Fig.7 Drain current as a function of gate 1 Fig.8 Forward transfer admittance as a function of voltage; typical values. drain current; typical values. 1996 Aug 01 5 Document Outline Features Applications Description Pinning Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outlines Data sheet status Definitions Disclaimers