Datasheet BF998, BF998R - 4

link to page 4 link to page 4 link to page 4 link to page 4 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air; BF998 note 1 460 K/W note 2 500 K/W Rth j-a thermal resistance from junction to ambient in free air; BF998R note 1 500 K/W
Notes
1. Device mounted on a ceramic substrate, 8 mm  10 mm  0.7 mm. 2. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
Tj = 25 C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-SS = 10 mA 6 20 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-SS = 10 mA 6 20 V V(P)G1-S gate 1-source cut-off voltage VG2-S = 4 V; VDS = 8 V; ID = 20 A  2.0 V V(P)G2-S gate 2-source cut-off voltage VG1-S = 0; VDS = 8 V; ID = 20 A  1.5 V IDSS drain-source current VG2-S = 4 V; VDS = 8 V; VG1-S = 0; note 1 2 18 mA IG1-SS gate 1 cut-off current VG2-S = VDS = 0; VG1-S = 5 V  50 nA IG2-SS gate 2 cut-off current VG1-S = VDS = 0; VG2-S = 5 V  50 nA
Note
1. Measured under pulse condition.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; VDS = 8 V; VG2-S = 4 V; ID = 10 mA.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
y  fs forward transfer admittance f = 1 kHz 21 24  mS Cig1-s input capacitance at gate 1 f = 1 MHz  2.1 2.5 pF Cig2-s input capacitance at gate 2 f = 1 MHz  1.2  pF Cos output capacitance f = 1 MHz  1.05  pF Crs reverse transfer capacitance f = 1 MHz  25  fF F noise figure f = 200 MHz; G  S = 2 mS; BS = BSopt 0.6  dB f = 800 MHz; G  S = 3.3 mS; BS = BSopt 1.0  dB 1996 Aug 01 4 Document Outline Features Applications Description Pinning Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outlines Data sheet status Definitions Disclaimers