Datasheets - MOSFET Single Transistors IXYS
Subsection: "MOSFET Single Transistors"
Manufacturer: "IXYS"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSeries
IXTA3N50D2 IXTA44P15T IXTH44P15T IXTP02N50D IXTP3N50D2 IXTP44P15T IXTQ44P15T IXTU02N50D IXTY02N50DSearch results: 182 Output: 1-20
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- TrenchP Power MOSFETs Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry ...
- TrenchP Power MOSFETs Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry ...
- TrenchP Power MOSFETs Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry ...
- TrenchP Power MOSFETs Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry ...
High Voltage Power MOSFET Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like ...
High Voltage Power MOSFET Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like ...
High Voltage Power MOSFET Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like ...
Depletion Mode N-Channel MOSFET- Depletion Mode N-Channel MOSFET
Part Number: IXUC120N10 Manufacturer: IXYS Description: MOSFET, N, ISOPLUS220 Download Data Sheet Docket: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 120N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 120 A ...
Part Number: IXTY1R4N60P Manufacturer: IXYS Description: MOSFET, N, D-PAK Specifications: Capacitance Ciss Typ: 140 pF Continuous Drain Current Id: 1 A Drain Source Voltage Vds: 600 V Junction to Case Thermal Resistance A: 2.5°C/W Mounting Type: ...
Part Number: IXTP8N50PM Manufacturer: IXYS Description: MOSFET, N, TO-220 Download Data Sheet Docket: Preliminary Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTP 8N50PM ...- Part Number: IXTP2N100 Manufacturer: IXYS Description: MOSFET, N, TO-220 Download Data Sheet Docket: High Voltage MOSFET N-Channel Enhancement Mode IXTA 2N100 IXTP 2N100 VDSS = 1000 V ID25 =2A RDS(on) = 7 Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ ...
- Part Number: IXTP1R6N50P Manufacturer: IXYS Description: MOSFET, N, TO-220 Download Data Sheet Docket: PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP 1R6N50P IXTY 1R6N50P VDSS ID25 RDS(on) Specifications: Capacitance Ciss ...
Part Number: IXTH20N60 Manufacturer: IXYS Description: MOSFET, N, TO-247 Download Data Sheet Docket: MegaMOSTMFET IXTH 20N60 IXTM 20N60 VDSS = 600 V = 20 A ID25 RDS(on) = 0.35 N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM ...- Part Number: IXKC25N80C Manufacturer: IXYS Description: MOSFET, N, ISOPLUS220 Specifications: Capacitance Ciss Typ: 4600 pF Continuous Drain Current Id: 20 A Drain Source Voltage Vds: 800 V Isolation Voltage: 2.5 kV Mounting Type: Through Hole ...
- Part Number: IXKC20N60C Manufacturer: IXYS Description: MOSFET, N, ISOPLUS220 Download Data Sheet Docket: CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS(on), ...
Part Number: IXFV30N60PS Manufacturer: IXYS Description: MOSFET, N, SMD, PLUS220 Download Data Sheet Docket: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV ...
Part Number: IXFT96N20P Manufacturer: IXYS Description: MOSFET, N, TO-268 Download Data Sheet Docket: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 96N20P IXFT 96N20P IXFV 96N20P VDSS ID25 ...
Part Number: IXFR180N10 Manufacturer: IXYS Description: MOSFET, N, ISOPLUS247 Download Data Sheet Docket: HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 (Electrically Isolated Back Surface) Single MOSFET Die Preliminary ...
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