Datasheets - MOSFET Single Transistors Motorola
Subsection: "MOSFET Single Transistors"
Manufacturer: "Motorola"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSearch results: 3 Output: 1-3
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- TMOS E-FET Power Field Effect Transistor - N-Channel Enhancement-Mode Silicon Gate - TMOS Power FET 2.0 Amperes 500 Volts RDS(on) = 3.6 Ohm - Case 221A 06, Style 5, TO 220AB This high voltage MOSFET uses an advanced termination scheme to provide ...
- N-Channel Enhancement-Mode Silicon Gate, Obsolete - No Replacement Part This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition this advanced ...
P Channel Enhancement Mode Silicon Gate TMOS Power FET Logic Level 15 Amperes 60 Volts RDS(on) = 175 MΩ This advanced high cell density HDTMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy ...
