1.0 A, 30 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with ...
1.0 A, 30 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with ...
1.0 A, 30 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with ...
1.0 A, 30 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with ...
Operational Amplifier, Low Voltage The NE5230 is a very low voltage operational amplifier that can perform with a voltage supply as low as 1.8 V or as high as 15 V. In addition, split or single supplies can be used, and the output will swing to ...
Schottky Diode UHF 70V The Schottky diode is designed primarily for high efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications. It is supplied in an inexpensive plastic ...
70 V Schottky Diode The Schottky diode is designed primarily for high efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications. It is supplied in an inexpensive plastic package ...
Hex Inverter The MC74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal ...
50 mA, 20 V PNP RF Bipolar Junction Transistor 50 mA, 20 V PNP RF Bipolar Junction Transistor is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.
Low Noise NPN Bipolar Transistor, TO-92 This NPN Bipolar transistor is designed for high gain, low noise general purpose amplifier applications. It is housed in a TO-92 package for medium power applications.
Low Noise NPN Bipolar Transistor, TO-92 This NPN Bipolar transistor is designed for high gain, low noise general purpose amplifier applications. It is housed in a TO-92 package for medium power applications.
Low Noise PNP Bipolar Transistor, TO-92 This PNP Bipolar transistor is designed for high gain, low noise general purpose amplifier applications. It is housed in a TO-92 package for medium power applications.
NPN PNP Bipolar Transistor The NPN PNP Bipolar Transistor is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By ...
NPN PNP Bipolar Transistor The NPN PNP Bipolar Transistor is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By ...
Boost Converter, Sync-Rect, PFM, DC-DC, 600 mA, with True-Cutoff and Ring-Killer NCP1421 is a monolithic micropower high-frequency step-up switching converter IC specially designed for battery- operated hand-held electronic products up to 600 mA ...