Datasheets - MOSFET Single Transistors ON Semiconductor

Subsection: "MOSFET Single Transistors"
Manufacturer: "ON Semiconductor"
Search results: 245 Output: 1-20

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  1. Power MOSFET 33 Amps, 100 Volts This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low ...
  2. Power MOSFET 20 Amps, 200 Volts This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low ...
  1. Power MOSFET 100V, 1.7Ω, 0.7A, Single P-Channel
  2. Small Signal MOSFET 250 mA, 200 V, N−Channel
  3. Power MOSFET -30V -50A 25 mOhm Single P-Channel TO-220 Logic Level This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery ...
  4. N-Channel Logic Level Enhancement Mode Field Effect Transistor 20V, 1.3A, 0.21Ω These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS ...
  5. Single P-Channel Logic Level PowerTrench MOSFET -20V, -2A, 70mΩ This P-Channel Logic Level MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low ...
  6. N-Channel Logic Level PowerTrench MOSFET 30V, 1.4A, 160mΩ These N-Channel Logic Level MOSFETs are produced using ON Semiconductor Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state ...
  7. N-Channel UltraFET Power MOSFET 100V, 75A, 8mΩ
  8. N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state ...
  9. TMOS E−FET High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device ...
  10. Small Signal MOSFET 200V 250mA 10 Ohm Single N-Channel TO-92 Logic Level This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface ...
  11. N-Channel Digital FET 25V, 0.68A, 0.45Ω These N-Channel enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at ...
  12. Power MOSFET 32 Amps, 60 Volts N−Channel TO−220 This device is obsolete.
  13. Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK
  14. Power MOSFET Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK
  15. Silicon Carbide MOSFET, N‐Channel, 650V, 15.6 mΩ, TO247−4L Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and ...
  16. Silicon Carbide MOSFET, N‐Channel, 650V, 12 mΩ, TO247−4L Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and ...
  17. Silicon Carbide MOSFET, N‐Channel, 650V, 15.3 mΩ, D2PAK−7L Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and ...
  18. Silicon Carbide MOSFET, N‐Channel, 650V, 12 mΩ, D2PAK−7L Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and ...

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