Datasheets - MOSFET Single Transistors STMicroelectronics
Subsection: "MOSFET Single Transistors"
Manufacturer: "STMicroelectronics"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSeries
BUZ171 BUZ71 IRF530 STB11NM60T4 STB19NF20 STB75NF75 STB9NK90Z STD12NE06 STD19NF20 STD30NF06 STD30NF06L STD30NF06LAG STD30NF06LT4 STD30PF03 STD4NK50Z STD4NK50Z-1 STD4NK50ZT4 STF19NF20 STF9NK90Z STFW4N150 STL200N45LF7 STL42P6LLF6 STP11NM60 STP19NF20 STP4N150 STP4NK50Z STP4NK50ZFP STP75NF75 STP75NF75FP STP9NK90Z STW4N150 STW88N65M5 STW88N65M5-4 STW9NK90Z STWA88N65M5Search results: 726 Output: 1-20
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- MOSFET Single Transistors STMicroelectronics STF19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STF19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ... - MOSFET Single Transistors STMicroelectronics STD19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STD19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ...
- MOSFET Single Transistors STMicroelectronics STB19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STB19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ... - MOSFET Single Transistors STMicroelectronics STP19NF20
Transistors, Transistor Arrays & Modules STMicroelectronics STP19NF20N-channel 200 V, 0.11 Ohm typ., 11 A MESH OVERLAY Power MOSFET in TO-220 package These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves ... - N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET
- N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET
- N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET
- N-channel 500 V, 2.2 Ω typ., 3 A SuperMESH Power MOSFETs in IPAK and DPAK packages These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the ...
- N-channel 500 V, 2.2 Ω typ., 3 A SuperMESH Power MOSFETs in IPAK and DPAK packages These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the ...
- N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
- N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
- N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
- SIPMOS Power Transistor
- N-Channel 50V -0.085Ω -17A TO-220 STripFET Power MOSFET
- N-channel 45 V, 1.4 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package All features Among the lowest R DS(on) on the market Excellent FoM (figure of merit) Low C rss /C iss ratio for EMI immunity High avalanche ruggedness
- N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-220 package All features Extremely high dv/dt capability Gate charge minimized 100% avalanche tested
- N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-220FP package All features Extremely high dv/dt capability Gate charge minimized 100% avalanche tested
- N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a D2PAK package All features Extremely high dv/dt capability Gate charge minimized 100% avalanche tested
- N-channel 900 V, 1.1 Ohm typ., 8 A SuperMESH Power MOSFET in a TO-247 package All features Extremely high dv/dt capability Gate charge minimized 100% avalanche tested
- N-channel 1500 V, 5 Ohm typ., 4 A PowerMESH Power MOSFET in a TO-220 package All features 100% avalanche tested High speed switching Intrinsic capacitances and Qg minimized Creepage distance path is 5.4 mm (typ.) for TO-3PF Fully isolated TO-3PF ...
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