Datasheets - Single FETs, MOSFETs - 6
Subsection: "Single FETs, MOSFETs"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSearch results: 8,187 Output: 101-120
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- Single FETs, MOSFETs Vishay SiHFR9310 SiHFR9310-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Single FETs, MOSFETs Vishay SiHFR9310 SiHFR9310TRL-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
- Single FETs, MOSFETs Vishay SiHFR9310 SiHFR9310TR-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Single FETs, MOSFETs Vishay SiHFR9310 SiHFR9310TRR-GE3
Transistors, Transistor Arrays & Modules Vishay SiHFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
- Single FETs, MOSFETs Vishay IRFU9310 IRFU9310PbF
Transistors, Transistor Arrays & Modules Vishay IRFU9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
- Single FETs, MOSFETs Vishay IRFR9310 IRFR9310TRLPbF
Transistors, Transistor Arrays & Modules Vishay IRFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Single FETs, MOSFETs Vishay IRFR9310 IRFR9310PbF
Transistors, Transistor Arrays & Modules Vishay IRFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Single FETs, MOSFETs Vishay IRFR9310 IRFR9310TRLPbF-BE3
Transistors, Transistor Arrays & Modules Vishay IRFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Single FETs, MOSFETs Vishay IRFR9310 IRFR9310TRPbF
Transistors, Transistor Arrays & Modules Vishay IRFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Single FETs, MOSFETs Vishay IRFR9310 IRFR9310TRRPbF
Transistors, Transistor Arrays & Modules Vishay IRFR9310Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ... - Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
- Single P-Channel Logic Level PowerTrench MOSFET -30V, -11A, 14mΩ This P-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low ...
EPC2361: 100 V, 101 A Enhancement-Mode GaN Power Transistor Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide ...- N-Channel 30 V (D-S) MOSFET
P-channel Enhancement Mode Mosfet This MOSFET is designed to meet the stringent requirements of Automotive applications.- P-channel Enhancement Mode Mosfet This MOSFET is designed to meet the stringent requirements of Automotive applications.
- Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V
- Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V