Datasheets - Single FETs, MOSFETs - 6
Subsection: "Single FETs, MOSFETs"
Manufacturers
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse Magnachip MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSearch results: 6,994 Output: 101-120
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- N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET
- N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET
- N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET
- N-channel 500 V, 2.2 Ω typ., 3 A SuperMESH Power MOSFETs in IPAK and DPAK packages These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the ...
- N-channel 500 V, 2.2 Ω typ., 3 A SuperMESH Power MOSFETs in IPAK and DPAK packages These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the ...
Power MOSFET Third generation power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.- Power MOSFET Third generation power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Power MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Power MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...- -60V-100V Small Signal MOSFET Package：SOT-23
- P-Channel, POWERTRENCH, Logic Level MOSFET This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications.
- P-Channel 30 V (D-S) MOSFET TrenchFET power MOSFET
- N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
- N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
- N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is ...
Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...- Power MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all ...
- 150 V, 329 A Enhancement Mode GaN Power Transistor
- 200 V, 260 A Enhancement Mode GaN Power Transistor