Infineon has expanded its RF power portfolio to include two new transistors capable of 360W and 90W P1dB output power (VDD of 28V). The new PTFB093608FV has been enhanced to include Infineon's smart discrete package and XBT technology, thus allowing extremely wide VBW (>100MHz) and outstanding DPD performance due to improved impedance characteristics at baseband. Its key features include 2×160W configuration, P3dB 56dBm at 28V, XBT technology for wide VBW capability (>100 MHz), input and output matched for ease of integration, typical 2C WCMDA target performance (28V, 960MHz), average power output of 160W, 19dB gain and drain efficiency of 40%. PTFB093608FV V2 is also capable of handling 10:1 VSWR @ 32V, 960MHz and delivers +3dB input overdrive as well as 500W (CW) output power. PTFB090901EA and PTFB090901FA are 90W FETs that offer excellent linearity and gain performance in a small, high-performance open cavity package. Each transistor features a reference circuit for easy evaluation. Gerber files are available online at www.infineon.com/rfpower: LTN/PTFB093608FV - tuned at 960MHz, LTN/PTFB090901EA - tuned at 960MHz, LTN/PTFB090901FA - tuned at 960MHz.
Features
- Outstanding DPD performance
- Wide VBW (>100MHz)
- High gain, excellent efficiency
- Smart discrete package enables smaller circuit designs
- Rugged design
- Pb-free and RoHS-compliant
- Reference circuits available
Applications
- Cellular RF power amplifiers
- Commercial avionics amplifiers
- Industrial RF amplifiers
