Infineon's new 1000W LDMOS transistor is designed for avionics applications in the 965 MHz to 1215 MHz frequency band. It offers over 1000W peak output power capability with 15dB of gain and 60 percent efficiency (under 100µsec, 10 percent DC pulse conditions and 1030MHz).
Manufactured using Infineon's rugged 50V LDMOS process, this transistor is capable of withstanding a minimum of 10:1 VSWR (Voltage Standing Wave Ratio) under Mode S signal conditions.
Two evaluation boards are available in a very compact design. One is tuned to operate at 1030MHz and the other to 1090MHz.
Features
- Capable of operation between 960MHz and 1215MHz
- Rugged design
- Capable of withstanding 10:1 VSWR, all phase angles, under Mode S
- Typical RF performance: 1000W peak power, 15dB gain, 58 percent efficiency, Mode S signal
- Low thermal resistance
Applications
- Avionics transponders
- L-band radars
- Industrial RF amplifiers
