Vishay Intertechnology announced the first MOSFETs in a new 500 V family that features the same benefits of low conduction and switching losses as the company's 600 V and 650 V E Series devices. The low on-resistance and gate charge of the new devices will play a key role in saving energy in high-power, high-performance consumer products, lighting applications, and ATX / silver box PC switch mode power supplies (SMPS).
Built on second-generation Super Junction Technology, the new Vishay Siliconix SiHx25N50E 500 V MOSFETs provide a high-efficiency complement to Vishay's existing 500 V D Series components based on high-performance planar technology. The 25 A devices feature low on-resistance of 145 mΩ in a variety of package options, including the TO-220, TO-247AC, and the thin leaded TO-220 FULLPAK, which offers a low profile optimized for slim consumer products.
The new MOSFETs provide ultra-low gate charge of 57 nC, and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications. Like Vishay's 600 V and 650 V E Series devices, the low on-resistance and optimized switching speed of the 500 V technology can increase efficiency and power density in power factor correction (PFC), two-switch forward converter, and flyback converter applications.
The RoHS-compliant devices are designed to withstand high energy pulses in the avalanche and commutation modes with guaranteed limits through 100 % UIS testing.
Device Specification Table:
|
Device
|
ID
@ 25 °C |
RDS(ON)
@ 10 V (max.) |
QG
@ 10 V (typ.) |
Package
|
|
25 A
|
145 mΩ
|
57 nQ
|
TO-247AC
|
|
|
25 A
|
145 mΩ
|
57 nQ
|
TO-220
|
|
|
25 A
|
145 mΩ
|
57 nQ
|
TO-220 FULLPAK
|
