Vishay Intertechnology Announces 11 New 500 V High-Voltage MOSFETs Built on Gen II Super Junction Technology

Vishay SiHD12N50E SiHP12N50E SiHB12N50E SiHA12N50E SiHP15N50E SiHB15N60E SiHA15N50E SiHG20N50E SiHP20N50E SiHB20N50E SiHA20N50E

Vishay Intertechnology announced the addition of 11 new devices to its 500 V series of high-voltage MOSFETs optimized for operation in switch mode power supplies (SMPS) to 500 W. Featuring the same benefits of extremely low conduction and switching losses as the company's E Series 600 V and 650 V devices, the Vishay Siliconix MOSFETs were developed to assist customers in achieving higher performance/efficiency standards such as the stringent 80 PLUS efficiency standards required for certain high-performance consumer products, lighting applications, and ATX / silver box PC SMPS.

Vishay SiHD12N50E

Built on second-generation Super Junction Technology, the 500 V MOSFETs released today provide a high-efficiency complement to Vishay's existing 500 V D Series components based on standard planar technology. The 12 A to 20 A devices feature low on-resistance from 190 mΩ to 380 mΩ and ultra-low gate charge of 22 nC to 45 nC. This combination results in a very favorable figure of merit (FOM) for power conversion applications.

The devices' low on-resistance also helps improve power density, while their faster switching speeds increase efficiency in typical hard switched topologies such as power factor correction (PFC), two-switch forward converters, and flyback converters.

The RoHS-compliant devices are designed to withstand high energy pulse in the avalanche and commutation modes with guaranteed limits through 100 % UIS testing.

Device Specification Table:
Device
ID (A) @
25 °C
RDS(on) (mΩ)
@ 10 V
(maximum)
QG (nC)
@ 10 V
(typical)
Package
12
380
22
TO-252
12
380
22
TO-220
12
380
22
TO-263
12
380
22
Thin lead TO-220
FULLPAK
15
280
30
TO-220
15
280
30
TO-263
15
280
30
Thin lead TO-220
FULLPAK
20
190
45
TO-247AC
20
190
45
TO-220
20
190
45
TO-263
20
190
45
Thin lead TO-220
FULLPAK