The new OptiMOS™ Fast Diode (FD), Infineon's latest generation of power MOSFETs in 200 V and 250 V, is optimized for body diode hard commutation.
Improved hard commutation ruggedness makes this device ideal for demanding conditions requiring higher dv/dt, dl/dt and current densities. This new family simplifies the design of hard-switching applications such as telecom systems, industrial power supplies, Class D audio amplifiers, motor controls and DC/AC inverters. It supports the highest standards of performance with an optimized reverse recovery charge (Qg).
| Comparisons of efficiency and voltage overshoot values in synchronous rectification for telecom applications |
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With 40% lower Qrr than OptiMOS™ 3, OptiMOS™ FD 200 V and 250 V improve system reliability significantly by reducing voltage overshoot. This minimizes the need for a snubber circuit, resulting in less engineering cost and effort.
Features
- Improved hard commutation ruggedness
- Optimized hard switching behaviour
- Industry´s lowest RDS(on), Qg and Qrr
- RoHS compliance – halogen-free
Applications
- Telecom systems
- Class D audio amplifiers
- Motor controls for 48-110 V systems
- Industrial power supplies
- DC/AC inverters
