Optimized for reducing switching, conduction & driver power losses to boost efficiency
ON Semiconductor has further expanded its broad portfolio of power MOSFETs with new, high efficiency single n-channel devices targeted at data networking, telecommunications and industrial applications.
These devices are capable of delivering incredibly low on state resistance, RDS(on), values, thereby minimizing conduction losses and improving overall operational efficiency levels. They also have very low gate capacitance (Ciss) - down to 2164 picofarads (pF) - which ensures driver losses are kept as low as possible.
With a rated breakdown voltage of 40 volts (V), the company’s new NTMFS5C404NLT, NTMFS5C410NLT and NTMFS5C442NLT MOSFETs have maximum RDS(on) values (@ Vgs = 10 V) of 0.74 milliohms (mΩ), 0.9 mΩ and 2.8 mΩ respectively, with continuous drain currents of 352 amps (A), 315 A and 127 A respectively. These are complemented by the NTMFS5C604NL, NTMFS5C612NL and NTMFS5C646NL, all of which have breakdown voltage ratings of 60 V. The maximum RDS(on) of these devices is 1.2 mΩ, 1.5 mΩ and 4.7 mΩ respectively, while their associated continuous drain currents are 287 A, 235 A and 93 A. Both the 40 V and 60 V devices are rated to operate at junction temperatures up to 175 ˚C, thereby giving engineers greater thermal headroom for their designs. ON Semiconductor will be expanding this offering with devices which feature additional RDS(on) values and different packages, such as micro8FL, DPAK and TO220.
Packaging and Pricing
The NTMFS5C404NL, NTMFS5C410NL, NTMFS5C442NL NTMFS5C604NL, NTMFS5C612NL and NTMFS5C646NL are all offered in compact, RoHS-complaint SO8FL (DFN-8) packages with pricing starting at $0.42 per unit in 10,000 unit quantities.
