International Rectifier introduces the IRF8010 series HEXFET® power MOSFETs with as much as 10% lower on-resistance, or RDS(on) than previous devices. The new devices have high current density and low on-resistance (12 milliohms typical) for maximum system efficiency.
The new MOSFETs are rated for repetitive and single pulse avalanche energy, EAR and EAS, up to 175°C. In addition, the new MOSFETs feature minimized input capacitance and gate charge to simplify gate driver circuits and cost while improving switching performance at the same time. The performance characteristics make the new IRF8010 MOSFETs ideal primary switches in isolated topology, high-efficiency UPS and DC-DC converters.
The new devices are industrial qualified and fully characterized in thermal resistance for end of life conditions in highly demanding power and thermal cycling, typically found in motor control applications, such as forklifts, DC choppers and battery-operated vehicles.
The thermal characterization enables designers to establish proper guard-bands and targets for final products that must operate in long-term stress and harsh power cycling conditions, for improved reliability.
| Part Number | VDSS | RDS(ON) | ID | RthJ-C | TJ | Package |
| IRF8010 | 100V | 12mW | 80A | 0.57°C/W | 175° | TO-220 |
| IRF8010L | 100V | 12mW | 80A | 0.57°C/W | 175° | TO-262 |
| IRF8010S | 100V | 12mW | 80A | 0.57°C/W | 175° | D2Pak |
Availability and Pricing
The new MOSFETs are available immediately. Pricing begins at US $0.624 each for the IRF8010 in 5,000-unit quantities.
