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Fully-Matched High-Power GaN/SiC Transistor Offers 50W at 5-6 GHz
RF
Integra Technologies
IGT5259L50
Integra Technologies announces the release of a fully-matched, GaN/SiC transistor, offering 50 W at 5-6 GHz. Designed for pulsed C-Band Radar applications, the IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50 Ohms and ...
Feb 12, 2018
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