Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable excellent efficiency and high switching frequency, starting a new era in power electronics. To support this development, Infineon Technologies adds the new ...
The STMicroelectronics MasterGaN4 power packages integrate two symmetrical 650 V gallium nitride (GaN) power transistors with 225 mΩ R DS(on) , alongside optimized gate drivers and circuit protection to simplify the design of high-efficiency ...
For Infrastructure, Cloud Computing, and Graphic Cards Applications, Devices Feature Integrated Current and Temperature Monitoring in PowerPAK® 5 mm × 6 mm Package Vishay Intertechnology introduced nine new 70 A, 80 A, and 100 A ...
The new compact SMD TOLL format helps reduce the size of equipment and the Kelvin source connection improves efficiency Toshiba Electronics Europe has announced five 650V superjunction power MOSFETs housed in the new compact SMD package in ...
Infineon Technologies has launched StrongIRFET™ 2 the new generation of power MOSFET technology in 80 V and 100 V. Featuring broad availability at distribution partners and excellent price/performance ratio make these right-fit products an ...
Space-saving LFPAK56D half-bridge offers 60% lower parasitic inductance and improved thermal performance for power train, motor control and DC/DC application Nexperia announced a series of half-bridge (high side low side) automotive MOSFETs ...
Superior switching and improved reliability deliver power density improvements in a variety of challenging applications ON Semiconductor has announced a new range of silicon carbide (SiC) MOSFET devices for demanding applications where power ...
Infineon Technologies introduces the new IMD110 SmartDriver series. The smart motor controller family combines the iMOTION™ Motion Control Engine (MCE) with a three-phase gate driver in a compact package. The integrated gate driver is based ...
66% more power GaNFast IC takes a bigger bite from the old, slow silicon chip market. Navitas Semiconductor announced the NV6128 , a new high-power 650V/800V-rated GaNFast power IC to address the high-power mobile and consumer power electronics ...
Industry-First Device in Compact 5 mm × 6 mm PowerPAK® SO-8L Package With Gullwing Leads Offers On-Resistance Down to 30 mΩ Vishay Intertechnology introduced a new AEC-Q101 qualified p-channel 100 V TrenchFET® MOSFET designed to ...