News & Press Releases Memory - 4
Subsection: "Memory"
Search results: 102 Output: 31-40
- New High-Capacity Triple-Level-Cell (TLC) NAND Provides Efficient, High-Performance Storage: Offers a focused balance in cost, capacity and performance. Enables the same capacity as MLC NAND with a 28% savings in die area. Targeted for use in ...02-06-2015
- New F-RAM™ Expands the Density Range of the Most Energy-Efficient Nonvolatile RAMs for Mission-Critical Data Storage Cypress Semiconductor introduced a family of 4 Mb serial Ferroelectric Random Access Memories (F-RAMs™), which are the ...06-05-2015
- CBRAM resistive memory enables radically low energy consumption, setting standard for a new generation of memory for the Era of Things Adesto Technologies, the inventor and market leader of the world’s lowest power memory solutions, announced ...15-01-2015
- Fujitsu Semiconductor developed of a new FRAM product, the MB85RC1MT , with 1 Mbit of memory, the highest memory density of our products with an I 2 C serial interface. The new product is guaranteed for up to 10 trillion read/write cycles, and is ...11-03-2014
- Memory Fujitsu Semiconductor MB85R4M2TFujitsu Semiconductor Limited announced the development of the MB85R4M2T , a 4 Mbit FRAM chip with an SRAM-compatible parallel interface. The new product will be made available in sample quantities starting January 2014. It uses a 44-pin TSOP ...19-11-2013
- A new material built from aluminum and antimony shows promise for next-generation data-storage devices A new, environmentally-friendly electronic alloy consisting of 50 aluminum atoms bound to 50 atoms of antimony may be promising for building ...21-09-2013
- Using 10nm-class process technology. Samsung Electronics has begun mass producing a 128, 3-bit MLC NAND memory chip using 10 nm-class process technology this month. The highly advanced chip will enable high-density memory solutions such as embedded ...17-04-2013
- EPFL scientists have combined two materials with advantageous electronic properties -- graphene and molybdenite -- into a flash memory prototype that is very promising in terms of performance, size and energy consumption. The molybdenite flash ...26-03-2013
- New Flash Devices Include Extended Operating Voltage Range From 2.3 to 3.6V. Microchip Technology announced an expansion of its SPI Flash memory portfolio, with the introduction of the SST25PF020B , SST25PF040B and SST25PF080B devices. The ...12-02-2013
- DataTraveler HyperX Predator 3.0 will be Available Up to 1TB; data Transfer Speeds up to 240MB/s Read, 160MB/s Write; certified SuperSpeed USB 3.0. Kingston Digita announced the DataTraveler HyperX Predator 3.0 USB Flash drive. DataTraveler HyperX ...10-01-2013
