Integrated level-shifters cut board space by 72 percent, energy loss by 35 percent and improve voltage transient protection via the industry’s widest input voltage range from 4.5 V to 60 V The MAX17577 and MAX17578 from Maxim Integrated ...
For Infrastructure, Cloud Computing, and Graphic Cards Applications, Devices Feature Integrated Current and Temperature Monitoring in PowerPAK® 5 mm × 6 mm Package Vishay Intertechnology introduced nine new 70 A, 80 A, and 100 A ...
Toshiba Electronics Europe has underlined its strength in power management by announcing the introduction of its new TCR5RG series. These low drop-out (LDO) voltage regulators cover an output voltage range of 0.9 V to 5.0 V, thereby giving them ...
Diodes Incorporated introduced 2.0 A single channel load switchThe AP22916 is a small, low leakage, single P-channel power MOSFET designed for low-power consumption, load-switching applications. The power MOSFET has a typical R DS(ON) of 60 mΩ at 5 ...
Alpha and Omega Semiconductor (AOS) announced a new Type-C Power Delivery (PD) high voltage source protection switch capable up to 28 V absolute maximum voltage. The AOZ1374 is a smart protection switch in a small thermally enhanced 3 mm × 3 ...
Holtek is pleased to announce the release of its new power bank dedicated Flash MCUs, the BP45F4NB and BP45FH4NB . Using their internal complementary PWM drive function, the devices can implement full charge and discharge battery management ...
The combination of the Renesas dual synchronous GaN buck controller and ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enables high power density and efficiency with the same BOM size and cost as silicon. EPC announces the ...
66% more power GaNFast IC takes a bigger bite from the old, slow silicon chip market. Navitas Semiconductor announced the NV6128 , a new high-power 650V/800V-rated GaNFast power IC to address the high-power mobile and consumer power electronics ...
Building upon the advantages of STMicroelectronics’ MasterGaN platform, MasterGaN2 is the first in the new family to contain two asymmetric gallium-nitride (GaN) transistors, delivering an integrated GaN solution suited to soft-switching and ...
Featuring adjustable over-voltage protection plus flagging capabilities Toshiba Electronics Europe has further expanded its range of advanced eFuse ICs, with the introduction of the TCKE712BNL . This new device will ensure that the highest degrees ...