News & Press Releases - Power - 4

New GaNFast Power ICs with Integrated Cooling Pad Enable Even Faster Charging in Smaller Sizes Navitas Semiconductor announced a new range of 650 V-rated GaNFast power ICs in 6 × 8 mm PQFN packaging with a proprietary, integrated cooling pad ...

Efficient operation reduces power consumption of motor equipment Toshiba Electronics Europe has announced a high voltage intelligent power device intended for driving the motor within equipment such as air conditioners, air cleaners and pumps. With ...

Optimized temperature and switching behavior for high-efficiency applications Alpha and Omega Semiconductor (AOS) announced the release of the new 1200 V silicon carbide (SiC) αSiC MOSFET technology platform. Specifically targeting the ...

Flexible solid-state switches are ideally suited to automotive ECU applications Toshiba Electronics Europe has launched two new gate driver switch intelligent power devices (IPDs). Fully AEC-Q100 compliant, the TPD7106F and TPD7107F can be used to ...

Efficient Power Conversion (EPC) introduces the first of a new integrated circuit (IC) product family offering higher performance and smaller solution size for high power density applications including DC-DC conversion, motor drive, and Class-D ...

GaNPower International is pleased to announce the release of two new GaNPower IC ( GPI8HINOIC and GPI8HIRGIC ) that were specially designed for high-side power switches in a half-bridge application. Using edge-triggered narrow pulses as input ...

General Electric GE is collaborating with the NASA Advanced Air Vehicles Program (AAVP) to enable the future of flight for large commercial aircraft with electric propulsion. The project team is developing a next generation motor-drive inverter ...

MAX22701E reduces overall system energy loss by 30 percent and improves system uptime with up to 3x higher CMTI performance With the MAX22701E isolated gate driver from Maxim Integrated Products designers of high-voltage/high-power systems can ...

Proven process, robust and scalable, ready for volume applications Nexperia announced its entry into the gallium nitride (GaN) FET market with the introduction of the 650 volt GAN063-650WSA , a very robust device with a gate-source voltage (V GS ) ...

Combining the flexibility of digital power with the responsiveness of analog algorithms, STMicroelectronics ’ STNRGPF12 dual-channel interleaved boost-PFC controller is easily configured and optimized using the Company’s eDesignSuite ...