News & Press Releases - Discretes - 10

New devices combine high efficiency and low noise Toshiba Electronics Europe announced the launch of a new series of 600 V planar MOSFETs known as “π-MOS IX”. The new series is aimed at small to medium switching power supplies such ...

GaN Systems made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most powerful line of high performance GaN transistors. Power levels continue to rise creating the need for higher operating current. The ...

High-performance diodes protect USB and power supply interfaces in mobile devices Toshiba Electronics Europe has announced a new series of TVS diodes that protect USB power lines and power supply connectors used in mobile devices. Toshiba’s ...

Optimal power efficiency using latest package technology sets a new industry standard for high power density applications Alpha and Omega Semiconductor introduced AONE36132 , a 25 V N-Channel MOSFET in a dual DFN 3.3 × 3.3 package which is ...

Diodes Incorporated announced its most advanced dataline transient voltage suppressor (TVS) ever, the DESD3V3Z1BCSF-7 . Designed to provide exceptional TVS/ESD protection to the high-speed input/output ports of advanced systems-on-chips (SoCs) ...

Additional U-MOS IX-H devices offer lowest-in-class on-resistance Toshiba Electronics Europe has started to ship two new 100 V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are ideally suited to power supply ...

Diode combines up to 30 kV protection with small footprint Toshiba Electronics Europe has introduced a new bi-directional electrostatic discharge (ESD) protection diode DF2B7ASL which is mainly targeting interface protection in applications with ...

Ideal for applications that demand improved reliability and thermal management Littelfuse introduced four new series of 1200 V silicon carbide (SiC) Schottky Diodes from its GEN2 product family, which was originally released in May 2017. The ...

Device Features Maximum On-Resistance of 0.58 mΩ at 10 V and Low Gate Charge of 61 nC in Compact PowerPAK® SO-8 Single Package Vishay Intertechnology introduced a new 25 V n-channel TrenchFET® Gen IV power MOSFET that features the ...

N-channel U-MOS-IX-H MOSFET with integrated SRD is ideal for power supplies and motor drives Toshiba Electronics Europe has expanded its line-up of MOSFETs based on its latest generation U-MOS-IX-H trench semiconductor process with a new, ...