All Sections - 8

30V, 100mA Low Power LDO The HT75xx-1 series is a set of three-terminal low power high voltage implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 30V. They are available with several fixed ...

30V, 100mA Low Power LDO The HT75xx-1 series is a set of three-terminal low power high voltage implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 30V. They are available with several fixed ...

GreenPAK Programmable Mixed-Signal IC, VDD Range: 1.71-5.5V, 10 GPIOs, 2 ACMPs, Multi-Time Programmable, I2C in STQFN-12 package The SLG46801 integrates the most popular mixed-signal functions with multi-time programmable (MTP) memory to provide a ...

GreenPAK Programmable Mixed-Signal IC, VDD Range: 1.71-5.5V, 10 GPIOs, 2 ACMPs, Multi-Time Programmable, I2C The SLG46801 integrates the most popular mixed-signal functions with multi-time programmable (MTP) memory to provide a low-power, highly ...

1700V, 40A, 72mΩ, N-Channel, Silicon Carbide MOSFET in TO-247-3L package TheJX-MT3 series SiC MOSFET in TO-247-3L package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with ...

1700V, 40A, 72mΩ, N-Channel, Silicon Carbide MOSFET in TO-247-3L package TheJX-MT3 series SiC MOSFET in TO-247-3L package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with ...

1700V, 40A, 72mΩ, N-Channel, Silicon Carbide MOSFET in TO-247-3L package TheJX-MT3 series SiC MOSFET in TO-247-3L package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with ...

1200V, 60A, 45mΩ , N-Channel, Silicon Carbide MOSFET in TO-247-3 package The JX-MT3 series SiC MOSFET in TO-247-3 package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with ...

1700V SiC N-Channel MOSFET in TO-247 package Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip ...

1700V, 40A, 72mΩ, N-Channel, Silicon Carbide MOSFET in TO-247-3L package The JX-MT3 series SiC MOSFET in TO-247-3L package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with ...