Datasheet KMA210 (NXP) - 10

ManufacturerNXP
DescriptionProgrammable Angle Sensor
Pages / Page37 / 10 — NXP Semiconductors. KMA210. Programmable angle sensor. Table 11. Power-on …
File Format / SizePDF / 586 Kb
Document LanguageEnglish

NXP Semiconductors. KMA210. Programmable angle sensor. Table 11. Power-on reset. Symbol. Parameter. Conditions. Min. Typ. Max. Unit. Table 12

NXP Semiconductors KMA210 Programmable angle sensor Table 11 Power-on reset Symbol Parameter Conditions Min Typ Max Unit Table 12

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NXP Semiconductors KMA210 Programmable angle sensor Table 11. Power-on reset
Characteristics are valid for the operating conditions, as specified in Section 9.
Symbol Parameter Conditions Min Typ Max Unit
Vth(on) switch-on threshold analog output switches on, if - 4.30 4.45 V voltage VDD > Vth(on) Vth(off) switch-off threshold analog output switches off, if 3.90 4.10 - V voltage VDD < Vth(off) V  hys hysteresis voltage Vhys = Vth(on) Vth(off) 0.1 0.2 - V VPOR power-on reset voltage IC is initialized - 3.3 3.6 V Vth(ov) overvoltage threshold analog output switches off, if 6.5 7.5 8.0 V voltage VDD > Vth(ov) Vhys(ov) overvoltage hysteresis 0.1 0.3 - V voltage
Table 12. Module performance
Characteristics are valid for the operating conditions, as specified in Section 9.
Symbol Parameter Conditions Min Typ Max Unit
res angle resolution [1] - - 0.04 deg  [2] max maximum angle programmable angular range 5 - 180 deg for V   (CL)u V(CL)l 80 %VDD ref reference angle programmable zero angle [2] 0 - 180 deg VO(nom) nominal output voltage at full supply operating range 5 - 95 %VDD V [3][4][5] O(udr) upper diagnostic range 96 - 100 %VDD output voltage V [3][4][5] O(ldr) lower diagnostic range 0 - 4 %VDD output voltage V(CL)u upper clamping voltage [4][5][6] 40 - 95 %VDD V(CL)l lower clamping voltage [4][5][6] 5 - 30.5 %VDD V [4][5]  (CL) clamping voltage variation deviation from programmed 0.3 - +0.3 %VDD value Vn(o)(RMS) RMS output noise voltage equivalent power noise [1][4] - 0.4 2.5 mV  [4][7]  lin linearity error temperature range 1.2 - +1.2 deg 40 C to +160 C temperature range [4][7] 1 - +1 deg 40 C to +140 C  [1][4][7] temp temperature drift error temperature range - - 0.8 deg 40 C to +160 C [8] temperature range [1][4][7] - - 0.65 deg 40 C to +140 C [8]  [7][8][9] tempRT temperature drift error at temperature range - - 0.65 deg room temperature 40 C to +160 C temperature range [7][8][9] - - 0.55 deg 40 C to +140 C hys hysteresis error referred to input [4][7] - - 0.09 deg lin microlinearity error referred to input [4][7] 0.1 - +0.1 deg KMA210 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 7 December 2011 10 of 37
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 2. Pinning information 3. Ordering information 4. Functional diagram 5. Functional description 5.1 Angular measurement directions 6. Analog output 7. Diagnostic features 7.1 CRC and EDC supervision 7.2 Magnet-loss detection 7.3 Power-loss detection 7.4 Broken bond wire detection 7.5 Low supply voltage detection and overvoltage protection 8. Limiting values 9. Recommended operating conditions 10. Thermal characteristics 11. Characteristics 12. Definition of errors 12.1 General 12.2 Hysteresis error 12.3 Linearity error 12.4 Microlinearity error 12.5 Temperature drift error 12.6 Angular error 13. Programming 13.1 General description 13.2 Timing characteristics 13.3 Sending and receiving data 13.3.1 Write access 13.3.2 Read access 13.3.3 Entering the command mode 13.4 Cyclic redundancy check 13.4.1 Software example in C 13.5 Registers 13.5.1 Command registers 13.5.2 Non-volatile memory registers 14. Electromagnetic compatibility 14.1 Emission (CISPR 25) 14.1.1 Conducted radio disturbance 14.1.2 Radiated radio disturbance 14.2 Radiated disturbances (ISO 11452-1 third edition (2005-02), ISO 11452-2, ISO 11452-4 and ISO 11452-5) 14.2.1 Absorber lined shielded enclosure 14.2.2 Bulk-current injection 14.2.3 Strip line 14.2.4 Immunity against mobile phones 14.3 Electrical transient transmission by capacitive coupling [ISO 7637-3, second edition (2007-07)] 15. ElectroStatic Discharge (ESD) 15.1 Human body model (AEC-Q100-002) 15.2 Human metal model (ANSI/ESD SP5.6-2009) 15.3 Machine model (AEC-Q100-003) 15.4 Charged-device model (AEC-Q100-011) 16. Application information 17. Test information 17.1 Quality information 18. Marking 19. Terminals 20. Package outline 21. Handling information 22. Solderability information 23. Revision history 24. Legal information 24.1 Data sheet status 24.2 Definitions 24.3 Disclaimers 24.4 Trademarks 25. Contact information 26. Contents