Datasheets - Transistors, Transistor Arrays & Modules - 2

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21. IRFR9310PbF — Datasheet Vishay
    MOSFET Single Transistors Vishay IRFR9310 IRFR9310PbF
    Transistors, Transistor Arrays & Modules Vishay IRFR9310
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
22. IRFR9310TRLPbF-BE3 — Datasheet Vishay
    MOSFET Single Transistors Vishay IRFR9310 IRFR9310TRLPbF-BE3
    Transistors, Transistor Arrays & Modules Vishay IRFR9310
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...

23. IRFR9310TRPbF — Datasheet Vishay
    MOSFET Single Transistors Vishay IRFR9310 IRFR9310TRPbF
    Transistors, Transistor Arrays & Modules Vishay IRFR9310
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
24. IRFR9310TRRPbF — Datasheet Vishay
    MOSFET Single Transistors Vishay IRFR9310 IRFR9310TRRPbF
    Transistors, Transistor Arrays & Modules Vishay IRFR9310
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...
25. IRFR9310 — Datasheet Vishay
    MOSFET Single Transistors Vishay IRFR9310
    Transistors, Transistor Arrays & Modules Vishay IRFR9310
    Power MOSFET Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are ...