International Rectifier introduced a pair of efficient, reliable ultra-fast Trench Insulated Gate Bipolar Transistors (IGBTs) optimized for induction heating and resonant switching applications such as welding and high power rectification.
The new 1200 V IGBTs utilize IR’s proven thin-wafer trench technology to offer critical performance benefits including low VCE(on) and ultra-fast switching to reduce power dissipation and achieve higher power density. In addition, devices feature a 1300 V repetitive peak rating for added system reliability. The IGBTs are co-packaged with a low forward-voltage high peak current soft forward-recovery diode optimized for resonant zero current turn-on operation.
These new IGBTs complement IR’s family of IGBTs for motor drive and hard switching applications. IR’s focus on power applications allows for optimization of devices to meet the technical requirements of various power systems.
Specifications
|
Part Number
|
Package
|
BV
|
I(nom)
|
Vceon
|
Rth(j-c)
|
Type
|
|
IRG7PH35UD1
|
TO247 - Copack
|
1200
|
20
|
1.9
|
0.70 °C/W
|
Ultrafast
|
|
IRG7PH42UD1
|
TO247 - Copack
|
1200
|
30
|
1.7
|
0.39 °C/W
|
Ultrafast
|
Availability and Pricing
Pricing begins at US $2.76 each for the IRG7PH35UD1PbF and US $3.98 each for the IRG7PH42UD1-EP in 10,000-unit quantities. Production quantities are available immediately. Prices are subject to change.
