Application Note AN-4155
March 2013
Fairchild recently developed a field-stop, shorted-anode, insulated-gate, bipolar transistor (IGBT) product family; ranging from 1100-1400 V and including an intrinsic body diode. Since the intrinsic anti-parallel diode is tailored to soft commutation, these new IGBTs are suitable for softswitching applications such as induction cookers and inverterized microwave ovens. With advancements over the typical non-punch-through (NPT) IGBT technology, Fairchild's shorted-anode silicon technology offers lower saturation voltage, up to 12.5%, than same rating NPT trench IGBT and lower tail current, up to 36 %, than the same rating NPT trench IGBT.
With the rapid progress in power semiconductors, each power electronics application has required dedicated semiconductor switching devices from both cost and performance standpoints. Although the operating frequency of IGBT is limited to the several tens of kHz due to its inevitably large tail current loss, it is very suitable for the high-power applications over 600 V voltage rating. The increment of saturation voltage drop, VCE(sat) in accordance with BVces is relatively smaller than other switching devices.
Today's most popular IGBT technology is Field-Stop IGBT (FS IGBT), which combines the advantages of PT (punchthrough) and NPT (non-punch-through) IGBT structures, while overcoming the drawbacks of each structure. FS IGBT provides lower VCE(sat) during on-state and lower switching losses during the turn-off instant. However, since it doesn't include an intrinsic body diode in common with all other types of IGBTs, it is generally packaged together with an additional Fast Recovery Diode (FRD) for most switching applications.
Meanwhile, two types of resonant inverters, a half-bridge (HB) inverter and a single-ended (SE) inverter can be considered for induction heating applications. The SE resonant inverter is more commonly used due to its lower cost structure, relatively high efficiency, and ability to handle relatively high power ratings up to about 2 kW.
This application note introduces Fairchild's secondgeneration, field-stop, shorted-anode, trench IGBT family that has intrinsic body diode, unlike general IGBTs, and discusses its validity in the SE resonant inverter for induction heating (IH) applications .
Download Application Note AN-4155 (766 Kb)
NPT IGBT (Left) and Field Stop IGBT (Right)
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