NXP has just released the first low VCEsat transistors in the new DFN2020D-3 (SOT1061D) package with solderable sidepads. PBSS4330PAS and PBSS5330PAS both offer a collector-ermitter voltage of 30 V and low VCEsat values of down to 45 mV. With a high current capability of 3 A and a high collector current gain of up to 500, these new transistors additionally come with excellent solder capabilities.
Housed in the small leadless, DFN2020D-3 (SOT1061D) plastic package, they are NXP's first low VCEsat transistors in DFN2020 to offer automatic optical inspection (AOI) of solder joints, particularly important in the automotive industry. They are also AEC-Q101 qualified and capable of handling temperatures up to 175 °C.
The portfolio of AOI capable transistors in DFN2020D-3 will be extended to include a range of Medium Power Transistors at the end of this year, and further low VCESat transistors with collector-ermittor voltages up to 100 V at the beginning of next year.
Features and benefits
- Low collector-ermitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- High temperature applications up to 175 °C
- Reduced printed-circuit board (PCB) area requirements
- Leadless small SMD plastic package DFN2020D-3 with solderable sidepads
- Exposed heat sink for excellent thermal and electrical conductivity
- Suitable for automatic optical inspection (AOI) of solder joint
- AEC-Q101 qualified
Key applications
- Loadswitches
- Battery-driven devices
- Power management devices
- Charging circuits
- Power switches of motors and fans
