Diodes Incorporated has extended its line of ultra-small discrete products for spacecritical product design. The company has announced a trio of small-signal MOSFETs in the tiny DFN0606 package: 20 V and 30 V rated N-channel transistors and a 30 V rated p-channel part. With a footprint measuring only 0.6 mm × 0.6 mm, each device takes 40% less board space than the commonly used DFN1006 (aka SOT883) packaged MOSFETs, making them an ideal choice for next-generation wearable tech, tablets and smartphones.
Able to deliver better or equivalent electrical performance than many of the larger package parts, the DMN2990UFZ (20 V nMOS), the DMN31D5UFZ (30 V nMOS) and DMP32D9UFZ (30 V pMOS) have been designed to minimize on-state resistance while still maintaining a superior switching performance. In addition, a typical threshold voltage of less than 1 V means a lower ‘turn-on’, suiting single-cell operation.
These tiny MOSFETs are well-suited for high-efficiency power-management duties and as general-purpose interfacing and simple analog switches. Circuit power density gets a boost too, with the DFN0606 parts achieving a power dissipation of 300 mW.
