Datasheet RH6200M (Analog Devices) - 3

RH6200M
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) TA = 25°C 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) SYMBOL PARAMETER CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage VS = 5V, 0V; VCM = V– to V+ 2.2 2.4 2.6 2.8 3 mV VS = ±5V; VCM = V– to V+ 6.5 7 7.5 8 8.5 mV IB Input Bias Current VS = 5V, 0V, VCM = V+ 20 22 24 26 28 μA VS = 5V, 0V, VCM = V– –55 –60 –65 –70 –75 μA VS = ±5V, VCM = V+ 20 22 24 26 28 μA VS = ±5V, VCM = V– –55 –60 –65 –70 –75 μA IOS Input Offset Current VS = 5V, 0V; VCM = V+ 5 6 7 8 9 μA VS = 5V, 0V; VCM = V– 6 7 8 9 10 μA VS = ±5V; VCM = V+ 8 9 10 11 12 μA VS = ±5V; VCM = V– 13 14 15 16 17 μA AVOL Large Signal Open VS = 5V, 0V; RL = 1k; VOUT = 0.5V to 4.5V 65 60 55 50 45 V/mV Loop Voltage Gain VS = 5V, 0V; RL = 100Ω; VOUT = 1V to 4V 10 9 8 7 6 V/mV VS = ±5V; RL = 1k; VOUT = ±4.5V 110 100 90 80 70 V/mV VS = ±5V; RL = 100Ω; VOUT = ±2V 13.5 12 10.5 9 7.5 V/mV CMRR Common Mode VS = 5V, 0V; VCM = 0V to 5V 64 63 62 61 60 dB Rejection Ratio VS = 5V, 0V; VCM = 1.5V to 3.5V 84 83 82 81 80 dB VS = ±5V; VCM = ±5V 67 66 65 64 63 dB VS = ±5V; VCM = ±2V 74 73 72 71 70 dB PSRR Power Supply VS = ±2.25V to ±5V 59 58 57 56 55 dB Rejection Ratio VOL Output Voltage VS = 5V, 0V; IL = 0 52 54 56 58 60 mV Swing Low VS = 5V, 0V; IL = 5mA 104 108 112 116 120 mV VS = 5V, 0V; IL = 20mA 296 302 308 314 320 mV VS = ±5V; IL = 0 52 54 56 58 60 mV VS = ±5V; IL = 5mA 114 118 122 126 130 mV VS = ±5V; IL = 20mA 296 302 308 314 320 mV VOH Output Voltage VS = 5V, 0V; IL = 0 114 118 122 126 130 mV Swing High VS = 5V, 0V; IL = 5mA 198 206 214 222 230 mV VS = 5V, 0V; IL = 20mA 415 430 445 460 475 mV VS = ±5V; IL = 0 134 138 142 146 150 mV VS = ±5V; IL = 5mA 218 226 234 242 250 mV VS = ±5V; IL = 20mA 430 455 470 485 500 mV ISC Short-Circuit Current VS = 5V, 0V or VS = ±5V 58 56 54 52 50 mA IS Supply Current VS = 5V, 0V 20.4 20.8 21.2 21.6 22 mA VS = ±5V 23.4 23.8 24.2 24.6 25 mA IS(SHDN) Shutdown Supply VS = 5V, 0V 1.84 1.88 1.92 1.96 2 mA Current VS = ±5V 2.14 2.18 2.22 2.26 2.3 mA ISHDN Shutdown Pin VS = 5V, 0V or VS = ±5V; VSHDN = 0.3V –284 –288 –292 –296 –300 μA Current
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 5:
The RH6200 is tested under pulse load conditions such that may cause permanent damage to the device. Exposure to any Absolute TJ ≈ TA. The thermal resistance of the W 10-lead CERPAC package Maximum Rating condition for extended periods may affect device (without heat sink) is estimated at 170°C/W. For a given application, reliability and lifetime. multiply the RMS power dissipation of the RH6200 times the package
Note 2:
Inputs are protected by back-to-back diodes. If the differential input thermal resistance (including any heat sinking if present) to calculate the voltage exceeds 0.7V, the input current must be limited to less than 40mA. temperature difference between the ambient temperature and the junction
Note 3:
A heat sink may be required to keep the junction temperature temperature. The RH6200 has a thermal shutdown feature that protects below the absolute maximum rating when the output is shorted indefinitely. the part from excessive junction temperature. The amplifier will shut down to an inactive, low current condition when the junction temperature
Note 4:
There are reverse-biased ESD diodes from all inputs and outputs exceeds approximately 160°C. The amplifier will remain shut down to the respective supply pins. If these pins are forced beyond either until the die cools off to below approximately 150°C, at which point the supply, unlimited current will flow through these diodes. If the current is amplifier will return to normal operation. transient in nature and limited to less than 30mA, no damage to the device will occur.
Note 6:
This parameter is not production tested. Typical bench evaluation performance listed for information only. rh6200mfa 3