News & Press Releases - Memory - 3
Subsection: "Memory"
Search results: 102 Output: 21-30
- The I 2 C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data A new low-cost, low-risk memory solution offering unlimited endurance and safe data storage at power loss is now available from Microchip ...Oct 27, 2016
- Provides the Industry’s First Self-refresh DRAM Device with the 12-Pin HyperBus™ Interface; Serves as Expanded Scratchpad Memory for High-Performance Applications Cypress Semiconductor announced sampling of a new high-speed, ...Sep 13, 2016
- New generation Toshiba BiCS FLASH adds layers, boosts capacity Toshiba Corporation unveiled the latest generation of its BiCS FLASH three-dimensional (3D) flash memory with a stacked cell structure, a 64-layer device that will be first in the world ...Aug 9, 2016
- Radiation-hardened power-management device integrates comprehensive functionality in an ultra-small form factor Texas Instruments (TI) introduced the industry's first double-data-rate (DDR) memory linear regulator for space applications. The ...Jul 13, 2016
- Opening the door to “10 nm-class DRAM” for the first time in the industry after overcoming technical challenges in DRAM scaling Samsung Electronics announced that it has begun mass producing the industry’s first 10-nanometer (nm) ...Jun 22, 2016
- SST26VF SQI Family of Flash Products Now Available With Improved Functionality and Low Power Consumption Microchip Technology Inc. announced the introduction of automotive-grade NOR Flash products with wider voltage and a larger temperature range. ...Feb 10, 2016
- New Samsung DRAM Solution Signals TSV Technology is heading for Mainstream High-Capacity Memory Applications Samsung Electronics announced that it is mass producing the industry’s first “through silicon via” (TSV) double data ...Dec 10, 2015
- New 256 Mb Device Delivers Up to 333 MBps of Read Bandwidth in a Low-Pin-Count Package; Addresses a Broad Range of the Highest-Performance Systems Cypress Semiconductor Corp. expanded its NOR HyperFlash product line with the qualification of a new ...Aug 13, 2015
- Innovative 3D stacked structure boosts capacity and performance Toshiba America Electronic Components , Inc. unveiled the new generation of BiCS FLASH, a three-dimensional (3D) stacked cell structure flash memory. The new device is the world's ...Aug 12, 2015
- With a Novel Parasitic Power Scheme, New Single-Wire Family Requires Just One Data and One Ground Pin Eliminating the Need for Power Source/ Vcc and Features Plug-and-Play 64-bit Serial Number for Identification Atmel Corporation launched the ...Aug 12, 2015
