Application Note AN11454
November 2013
This document provides circuit simulation, schematic, layout, BOM and typical EVB performance for a 5-5.9 GHz WiFi (WLAN) LNA.
The BFU730F is a discrete HBT that is produced using NXP Semiconductors' advanced 110 GHz fT SiGe:C BiCmos process. SiGe:C is a normal silicon germanium process with the addition of Carbon in the base layer of the NPN transistor. The presence of carbon in the base layer suppresses the boron diffusion during wafer processing. This allows a steeper and narrower SiGe HBT base and a heavier doped base. As a result, lower base resistance, lower noise and higher cut off frequency can be achieved.
The BFU730F is one of a series of transistors made in SiGe:C. BFU710F, BFU730LX, BFU760F and BFU790F are the other types. BFU710F is intended for ultra low current applications. The BFU760F and BFU790F are high current types and are intended for application where linearity is the key.
New 6th & 7th Generation Wideband transistors from NXP offer best RF noise figure / gain tradeoff at 12GHz drawing lowest current which means best signal reception at low power, enabling products to be more sensitive in noisy environments and friendlier to the environment.
Key Benefits:
- Application up to 18 GHz and higher
- Broad choice of parts for the perfect fit in the application
- Lowest current consumption meaning greener products
- SOT343F for BFU730F and the others SOT883C for BFU730LX are package for high performance and easy manufacturing
Download Application Note AN11454 (1.0 Mb)
BFU730 F 5 - 5.9 GHz WiFi LNA EVB Demo Board
