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  1. Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is adding a new 5-11 GHz ultra-low noise amplifier to their growing line of high-quality products. The CMD132P3 presents an ultra-low noise figure of ...
    RF · Wireless » Custom MMIC » CMD132P3
    21-02-2013
  2. AVX Corporation has introduced a new series of low profile, best in class 0805 MLO™ diplexers. Based on its patented multilayer organic high density interconnect technology, AVX’s new MLO diplexers incorporate high dielectric constant ...
    19-02-2013
  3. Infineon's new 1000W LDMOS transistor is designed for avionics applications in the 965 MHz to 1215 MHz frequency band. It offers over 1000W peak output power capability with 15dB of gain and 60 percent efficiency (under 100µsec, 10 percent DC ...
    25-01-2013
  4. New CC2530-based BoosterPack from Anaren works with both MSP430 and Stellaris LaunchPad evaluation kits for fast time to market of new wireless connectivity designs Texas Instruments Incorporated (TI) announced the full availability of a new ZigBee ...
    10-01-2013
  5. RF Micro Devices , Inc. (RFMD) announced the availability of the RFFM6903 front end module (FEM). RFMD's highly-integrated RFFM6903 FEM meets or exceeds the system requirements for AMI/AMR smart meter applications operating in the 868MHz 960MHz ...
    RF · Wireless » RFMD » RFFM6903
    29-12-2012
  6. Infineon has launched two new LDMOS RF power transistors for applications in the 1200MHz to 1400MHz frequency band. PTVA123501EC achieves over 400W peak output power with 13dB gain and 52 percent efficiency measured at 1400MHz, Vdd 50V and a ...
    RF » Infineon » PTVA123501EC, PTVA120251EA
    04-12-2012
  7. FM radio receiver modules are standard in many of today’s mobile phones and handsets, with the mobile phone’s headset cord doubling as the FM antenna. However, this is not an ideal solution, as reception can be poor, the wired headset ...
    RF · Radio » Infineon » BGB719N7ESD
    03-12-2012
  8. Infineon introduced its first single-chip radar solution for applications in industrial and commercial sensing. Based on the SiGe:C process technology and operating in the 24GHz ISM band (24.0 24.25GHz), the new BGT24MTR11 radar transceiver is the ...
    RF · Wireless » Infineon » BGT24MTR11, BGT24MR2, BGT24MTR12
    02-12-2012
  9. ATmegaRFR2 Consumes 50 Percent Less Power than Nearest Competitor; Wireless Composer Available in Atmel Studio 6 Gallery to Further Accelerate Design Process Atmel Corporatio n announced the Atmel ATmegaRFR2 AVR family of devices, its ...
    RF · Wireless · Microcontrollers » Atmel » ATmega64RFR2, ATmega128RFR2, ATmega256RFR2
    18-11-2012
  10. Complementing RF transistor and MMIC portfolio, Infineon now offer RF transistors based on next-generation SiGe:C HBT (Silicon Germanium Carbon Hetero Bipolar Transistor) technology. To develop this technology, R D experts set themselves the target ...
    RF · Wireless » Infineon » BFP840ESD, BFP840FESD, BFR840L3RHESD
    29-10-2012
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