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  1. Device Features High 37.8 A Continuous Drain Current and On-Resistance Down to 8.4 mΩ in Compact PowerPAK® SC-70 Package Vishay Intertechnology introduced a new 30 V n-channel TrenchFET® Gen IV power MOSFET that delivers increased ...
    Discretes · Power » Vishay » SiA468DJ
    11-04-2017
  2. Diodes Incorporated introduced the DMNH4015SSDQ and DMTH6016LSDQ . Featuring low figure-of-merit on-resistance and gate charge specifications, these latest 40 V and 60 V dual, co-packaged enhancement mode MOSFETs minimize power losses, enabling ...
    Discretes · Supply · Power » Diodes » DMNH4015SSDQ, DMTH6016LSDQ
    27-03-2017
  3. Diodes Incorporated introduced the D28V0H1U2P5Q at Embedded World 2017. Billed as the industry’s first unidirectional 1800 W automotive-compliant transient voltage suppressor (TVS), this device is designed to protect sensitive electronic ...
    Discretes · Automotive · Power » Diodes » D28V0H1U2P5Q
    22-03-2017
  4. Applications Include White LED Backlights, Liquid Crystal Displays Toshiba Electronics Europe expanded its extensive portfolio of diodes with the addition of six low reverse-current Schottky Barrier Diodes (SBDs). With a peak reverse voltage of 40 ...
    Discretes · Power » Toshiba » CCS15F40, CUS15F40, CBS10F40, CUS10F40, CTS05F40, CUS05F40
    12-03-2017
  5. Reduces power loss and physical size of power supply systems Mitsubishi Electric Corporation announced its launch of a silicon-carbide Schottky-barrier diode (SiC-SBD) that incorporates a junction-barrier Schottky (JBS) structure to reduce the ...
    Discretes · Power » Mitsubishi » BD20060S, BD20060T
    12-03-2017
  6. Superjunction Device Provides Industry’s Lowest R DS(ON) ∙Q g FOM for Telecom, Industrial, and Enterprise Applications Vishay Intertechnology introduced the first device in its fourth generation of 600 V E Series power MOSFETs. ...
    Discretes · Power » Vishay » SiHP065N60E
    10-02-2017
  7. Vishay Intertechnology introduced a new series of 250 W full-bridge hybrid planar transformers for avionics, industrial control, and alternative energy control applications. Featuring a unique winding structure, TPL-2516 series devices provide a ...
    Discretes · Power » Vishay » TPL-2516
    20-12-2016
  8. Central Semiconductor introduces its newest energy efficient, high voltage UltraMOS™ MOSFET designed to minimize total conduction losses while maximizing power density. The CDM2206-800LR is a 6 A, 800 V MOSFET in the TO-220 package. The low ...
    Discretes · Power » Central Semiconductor » CDM2206-800LR
    30-11-2016
  9. 60 V SOP Advance SMD device allows designers to optimise performance and reduce size of power supply and motor control designs Toshiba Electronics Europe has further expanded its U-MOS IX-H family of compact, high-efficiency, high-speed switching ...
    Discretes · Power » Toshiba » TPH1R306PL
    10-11-2016
  10. Wolfspeed, a Cree Company has introduced a 1000 V MOSFET that enables a reduction in overall system cost, while improving system efficiency and decreasing system-size. The new MOSFET, specially optimized for fast charging and industrial power ...
    Discretes · Power » Wolfspeed » C3M0065100K
    19-10-2016
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