RadioLocman.com Electronics ru
Advanced Search +
  
Search results: 286   Output: 11-20
  1. Diodes Incorporated introduced the SDT series of Schottky diodes. Using an advanced deep-trench process, these devices deliver superior performance at similar or lower cost to planar-type Schottky diodes. The initial family of 29 devices, housed in ...
    18-07-2017
  2. Second generation platform passes AEC-Q101 tests for high power automotive applications Transphorm Inc. announced that its second generation, JEDEC-qualified high voltage gallium nitride (GaN) technology is now the industry’s first GaN ...
    Discretes · Automotive · Power » Transphorm » TPH3205WSBQA
    07-06-2017
  3. STMicroelectronics has introduced new MOSFET devices in the advanced PowerFLAT 5×6 dual-side cooling (DSC) package, enabling increased power density in automotive Electronic Control Units (ECUs). The new MOSFETs have already been chosen by ...
    Discretes · Automotive · Power » STMicroelectronics » STLD200N4F6AG, STLD125N4F6AG
    30-05-2017
  4. A full range of 2 A-40 A 1200 V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes from STMicroelectronics enables a wider range of applications to benefit from the high switching efficiency, fast recovery, and consistent temperature ...
    16-05-2017
  5. Vishay Intertechnology introduced a new AEC-Q200 qualified inductor that is the industry’s first to offer a continuous current rating of 125 A. For automotive and industrial applications, the Vishay Dale IHXL-2000VZ-5A features a 190 A ...
    Discretes » Vishay » AEC-Q200
    08-05-2017
  6. Device Features High 37.8 A Continuous Drain Current and On-Resistance Down to 8.4 mΩ in Compact PowerPAK® SC-70 Package Vishay Intertechnology introduced a new 30 V n-channel TrenchFET® Gen IV power MOSFET that delivers increased ...
    Discretes · Power » Vishay » SiA468DJ
    11-04-2017
  7. Diodes Incorporated introduced the DMNH4015SSDQ and DMTH6016LSDQ . Featuring low figure-of-merit on-resistance and gate charge specifications, these latest 40 V and 60 V dual, co-packaged enhancement mode MOSFETs minimize power losses, enabling ...
    Discretes · Supply · Power » Diodes » DMNH4015SSDQ, DMTH6016LSDQ
    27-03-2017
  8. Diodes Incorporated introduced the D28V0H1U2P5Q at Embedded World 2017. Billed as the industry’s first unidirectional 1800 W automotive-compliant transient voltage suppressor (TVS), this device is designed to protect sensitive electronic ...
    Discretes · Automotive · Power » Diodes » D28V0H1U2P5Q
    22-03-2017
  9. Applications Include White LED Backlights, Liquid Crystal Displays Toshiba Electronics Europe expanded its extensive portfolio of diodes with the addition of six low reverse-current Schottky Barrier Diodes (SBDs). With a peak reverse voltage of 40 ...
    Discretes · Power » Toshiba » CCS15F40, CUS15F40, CBS10F40, CUS10F40, CTS05F40, CUS05F40
    12-03-2017
  10. Reduces power loss and physical size of power supply systems Mitsubishi Electric Corporation announced its launch of a silicon-carbide Schottky-barrier diode (SiC-SBD) that incorporates a junction-barrier Schottky (JBS) structure to reduce the ...
    Discretes · Power » Mitsubishi » BD20060S, BD20060T
    12-03-2017
 Pages:

Slices ↓
Radiolocman facebook Radiolocman twitter Radiolocman google plus