RadioLocman.com Electronics ru
Advanced Search +
  
Search results: 266   Output: 11-20
  1. Diodes Incorporated introduced the SBRT3M40P1 . This Trench Super Barrier Rectifier (SBR®) has been optimized to deliver a low forward-voltage drop in a small form factor while maintaining low reverse-current leakage. This capability addresses ...
    Discretes · Light · Power » Diodes » SBRT3M40P1
    11-08-2016
  2. Ampleon announced the availability of the BLCU188XRS, a 1400 W, CW capable, high power extremely rugged transistor constructed in a thermally optimized air cavity ACP3 copper flanged plastic package. Able to withstand extremely load mismatches, up ...
    RF · Discretes » Ampleon » BLCU188XRS
    28-07-2016
  3. Vishay Intertechnology announced that it has extended its offering of 600 V and 650 V E Series power MOSFETs with three new n-channel devices in the compact PowerPAK® SO-8L package. Providing space-saving alternatives to MOSFETs in the TO-252 ...
    Discretes · Power » Vishay » SiHJ8N60E, SiHJ6N65E, SiHJ7N65E
    11-07-2016
  4. Tiny LGA package is 80 percent smaller than traditional 60-V load switches Texas Instruments (TI) introduced a new 60-V N-channel FemtoFET power transistor that provides the industry's lowest resistance that is 90 percent below traditional 60-V ...
    Discretes · Power » Texas Instruments » CSD18541F5
    22-06-2016
  5. Central Semiconductor introduces its newest energy efficient, high voltage UltraMOS™ MOSFET designed to minimize total conduction losses while maximizing power density. The CDM22012-800LRFP is a 12 A, 800 V MOSFET in the TO-220FP (Full Pack) ...
    Discretes · Power » Central Semiconductor » CDM22012-800LRFP
    02-06-2016
  6. NXP Semiconductors introduced the most powerful RF transistor in any technology operating at any frequency. Designed to deliver 1.50 kW CW at 50V, the MRF1K50H can reduce the number of transistors in high-power RF amplifiers, which decreases ...
    RF · Discretes » NXP » MRF1K50H
    15-05-2016
  7. Vishay Intertechnology expanded its portfolio of fast body diode n-channel power MOSFETs with the introduction of new 650 V EF Series devices. Augmenting the company’s 600 V offering, the Vishay Siliconix SiHx21N65EF , SiHx28N65EF , and ...
    Discretes · Power » Vishay » SiHA21N65EF, SiHB21N65EF, SiHG21N65EF, SiHH21N65EF, SiHP21N65EF, SiHG28N65EF, SiHP28N65EF
    15-05-2016
  8. Setting new benchmarks in power efficiency for high power switching systems ON Semiconductor has introduced a new series of insulated gate bipolar transistors (IGBTs) which utilize its proprietary Ultra Field Stop trench technology. The ...
    Discretes · Power » ON Semiconductor » NGTB40N120FL3WG, NGTB25N120FL3WG, NGTB40N120L3WG
    13-05-2016
  9. NXP Semiconductors set a new benchmark in RF power performance with four new LDMOS transistors. The new transistors aim to deliver best-in class performance for defense radar and identification friend or foe (IFF) systems operating between 900 and ...
    RF · Discretes » NXP » MMRF1312H/HS, MMRF1314H/HS, MMRF1317H/HS, MMRF2010N/GN
    11-04-2016
  10. Superior Switching Performance Helps Manufacturers Meet Tough Energy Efficiency and EMI Regulations Fairchild released its first 1200 V silicon carbide (SiC) diode, the FFSH40120ADN , in its series of upcoming SiC solutions. The 1200 V ...
    Discretes · High Voltage · Power » Fairchild » FFSH40120ADN
    25-03-2016
 Pages:

Slices ↓
Radiolocman facebook Radiolocman twitter Radiolocman google plus