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Search results: 273   Output: 11-20
  1. 60 V SOP Advance SMD device allows designers to optimise performance and reduce size of power supply and motor control designs Toshiba Electronics Europe has further expanded its U-MOS IX-H family of compact, high-efficiency, high-speed switching ...
    Discretes · Power » Toshiba » TPH1R306PL
    10-11-2016
  2. Wolfspeed, a Cree Company has introduced a 1000 V MOSFET that enables a reduction in overall system cost, while improving system efficiency and decreasing system-size. The new MOSFET, specially optimized for fast charging and industrial power ...
    Discretes · Power » Wolfspeed » C3M0065100K
    19-10-2016
  3. Vishay Intertechnology announced that it has extended its AEC-Q200-qualified Professional Thin Film MELF resistors to tighter tolerance in the low-ohmic range below 1 Ω for the 0204 and 0207 case sizes. Along with a low temperature ...
    Discretes » Vishay » MMU 0102, MMA 0204, MMB 0207
    12-10-2016
  4. Alpha and Omega Semiconductor Limited (AOS) announced the release of AOC3860 , a common-drain 12 V dual n-channel MOSFET with the lowest on-resistance in the product family of 2.15 mOhm typical at 4.5 V gate drive. This new device provides further ...
    Discretes · Power » Alpha & Omega » AOC3860
    12-10-2016
  5. Vishay Intertechnology released a new 4-line ESD protection array for portable electronics in the ultra-compact chip-level CLP1007-5L package. Offering an extreme size reduction over previous-generation components without sacrificing performance, ...
    Discretes · Interfaces » Vishay » VBUS54FD-SD1
    27-09-2016
  6. Low saturation voltage and optimal switching characteristics deliver higher efficiencies and improved performance Alpha and Omega Semiconductor announced the addition of AOK30B135W1 to its 1350 V AlphaIGBT™ family. The new AOK30B135W1 has ...
    Discretes · Power » Alpha & Omega » AOK30B135W1
    13-09-2016
  7. Linear Integrated Systems (LIS) announces the immediate availability of its LSJ689 , a 1.8 nV/Hz @ 1 kHz, low-capacitance, monolithic dual P-Channel JFET. The LSJ689 is a P-Channel complement to our monolithic dual N-Channel JFET, the LSK489 . This ...
    25-08-2016
  8. Diodes Incorporated introduced the SBRT3M40P1 . This Trench Super Barrier Rectifier (SBR®) has been optimized to deliver a low forward-voltage drop in a small form factor while maintaining low reverse-current leakage. This capability addresses ...
    Discretes · Light · Power » Diodes » SBRT3M40P1
    11-08-2016
  9. Ampleon announced the availability of the BLCU188XRS, a 1400 W, CW capable, high power extremely rugged transistor constructed in a thermally optimized air cavity ACP3 copper flanged plastic package. Able to withstand extremely load mismatches, up ...
    RF · Discretes » Ampleon » BLCU188XRS
    28-07-2016
  10. Vishay Intertechnology announced that it has extended its offering of 600 V and 650 V E Series power MOSFETs with three new n-channel devices in the compact PowerPAK® SO-8L package. Providing space-saving alternatives to MOSFETs in the TO-252 ...
    Discretes · Power » Vishay » SiHJ8N60E, SiHJ6N65E, SiHJ7N65E
    11-07-2016
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