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  1. X-REL Semiconductor has broadened its XTR2N family of high-temperature MOSFET transistors by introducing two new mid-power P-channel and two small-signal P- and N-channel transistors. Intended for high-reliability, extreme temperature and extended ...
    Discretes » X-REL » XTR2N0307, XTR2N0325, XTR2N0350, XTR2N0525, XTR2N0550, XTR2N0807
    09-07-2014
  2. Vishay Intertechnology announced that it has extended its RCL e3 series of long side termination thick film chip resistors with new devices in the 0406 and 1225 case sizes. For automotive electronic circuits and general purpose applications, the ...
    Discretes » Vishay » RCL e3
    03-07-2014
  3. Infineon Technologies expands the comprehensive SiC portfolio introducing the 5th generation 1200 V thinQ! ™ SiC Schottky diodes. The new 1200 V SiC diodes feature ultra-low forward voltage even at operating temperatures, more than 100 ...
    Discretes · Power » Infineon » thinQ!
    25-06-2014
  4. NXP enlarges its small-signal MOSFETs portfolio with two new medium power P-channel MOSFETs in the ultra small, leadless package DFN1010D-3 (SOT1215) with solderable side pads. PMXB65UPE and PMXB75UPE offer a drain current of up to 3.2 A, ...
    Discretes » NXP » PMXB65UPE, PMXB75UPE
    24-06-2014
  5. International Rectifier introduced the introduction of a family of Large Can DirectFET® MOSFETs for industrial applications requiring ultra-low on-state resistance (R DS(ON) ) including high power DC motors, DC/AC inverters, and high current ...
    Discretes · Power » International Rectifier » IRF7739L1TRPBF, IRF7749L1TRPBF, IRF7748L1TRPBF, IRF7759L2TRPBF, IRF7769L1TRPBF, IRF7779L2TRPBF
    19-06-2014
  6. NXP introduces the first two 60 V low leakage Schottky barrier rectifiers in the FlatPower SOD123W package. PMEG6010ELR and PMEG6020ELR offer a reverse voltage of 60 V and average forward currents of 1 A and 2 A. They also offer a low reverse ...
    Discretes » NXP » PMEG6010ELR, PMEG6020ELR
    16-06-2014
  7. Microsemi Corporation introduced its new silicon carbide (SiC) MOSFET product family with new 1200 volt (V) solutions. The innovative new SiC MOSFETs are designed for high-power industrial applications where efficiency is critical. These ...
    Discretes · Power » Microsemi » APT40SM120B, APT40SM120J, APT50SM120B, APT50SM120J
    10-06-2014
  8. NXP Semiconductors announced the launch of its ninth generation (Gen9) LDMOS RF power transistors for wireless/cellular base stations. These ground-breaking devices represent a further step-up in performance for LDMOS transistors, having shown up ...
    RF · Discretes » NXP » LDMOS RF, BLC9G27LS-150 AV
    08-06-2014
  9. Coilcraft ’s new VS Series air core inductors combine current ratings of up to 57.0 Amps and excellent Q factors, making them ideal for high current IF/RF applications. Other applications include high power filtering, high frequency VRMs ...
    Discretes · Power » Coilcraft » 1010VS, 1212VS, 2014VS
    03-06-2014
  10. NXP extends its transistor portfolio by releasing 20 new 500 mA resistor equipped transistors (RETs) in SOT23 and SOT323 packages. Our product series PDTB1xxxT / PDTB1xxxU and PDTD1xxxT / PDTD1xxxU offer an output current capability of 500 mA, ...
    Discretes » NXP » PDTB1xxxT, PDTB1xxxU, PDTD1xxxT, PDTD1xxxU
    26-05-2014
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