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  1. Infineon Technologies expands the comprehensive SiC portfolio introducing the 5th generation 1200 V thinQ! ™ SiC Schottky diodes. The new 1200 V SiC diodes feature ultra-low forward voltage even at operating temperatures, more than 100 ...
    Discretes · Power » Infineon » thinQ!
    25-06-2014
  2. NXP enlarges its small-signal MOSFETs portfolio with two new medium power P-channel MOSFETs in the ultra small, leadless package DFN1010D-3 (SOT1215) with solderable side pads. PMXB65UPE and PMXB75UPE offer a drain current of up to 3.2 A, ...
    Discretes » NXP » PMXB65UPE, PMXB75UPE
    24-06-2014
  3. International Rectifier introduced the introduction of a family of Large Can DirectFET® MOSFETs for industrial applications requiring ultra-low on-state resistance (R DS(ON) ) including high power DC motors, DC/AC inverters, and high current ...
    Discretes · Power » International Rectifier » IRF7739L1TRPBF, IRF7749L1TRPBF, IRF7748L1TRPBF, IRF7759L2TRPBF, IRF7769L1TRPBF, IRF7779L2TRPBF
    19-06-2014
  4. NXP introduces the first two 60 V low leakage Schottky barrier rectifiers in the FlatPower SOD123W package. PMEG6010ELR and PMEG6020ELR offer a reverse voltage of 60 V and average forward currents of 1 A and 2 A. They also offer a low reverse ...
    Discretes » NXP » PMEG6010ELR, PMEG6020ELR
    16-06-2014
  5. Microsemi Corporation introduced its new silicon carbide (SiC) MOSFET product family with new 1200 volt (V) solutions. The innovative new SiC MOSFETs are designed for high-power industrial applications where efficiency is critical. These ...
    Discretes · Power » Microsemi » APT40SM120B, APT40SM120J, APT50SM120B, APT50SM120J
    10-06-2014
  6. NXP Semiconductors announced the launch of its ninth generation (Gen9) LDMOS RF power transistors for wireless/cellular base stations. These ground-breaking devices represent a further step-up in performance for LDMOS transistors, having shown up ...
    RF · Discretes » NXP » LDMOS RF, BLC9G27LS-150 AV
    08-06-2014
  7. Coilcraft ’s new VS Series air core inductors combine current ratings of up to 57.0 Amps and excellent Q factors, making them ideal for high current IF/RF applications. Other applications include high power filtering, high frequency VRMs ...
    Discretes · Power » Coilcraft » 1010VS, 1212VS, 2014VS
    03-06-2014
  8. NXP extends its transistor portfolio by releasing 20 new 500 mA resistor equipped transistors (RETs) in SOT23 and SOT323 packages. Our product series PDTB1xxxT / PDTB1xxxU and PDTD1xxxT / PDTD1xxxU offer an output current capability of 500 mA, ...
    Discretes » NXP » PDTB1xxxT, PDTB1xxxU, PDTD1xxxT, PDTD1xxxU
    26-05-2014
  9. Infineon releas Blade 3×3 is a discrete MOSFET package with 3.0 × 3.4 mm 2 package outline. This new and revolutionary Blade packaging concept raises the bar for high-performance power packages. The packaging technology does not use ...
    Discretes · Power » Infineon » Blade 3×3
    25-05-2014
  10. Vishay Intertechnology introduced the industry's first surface-mount, 4-terminal Power Metal Strip® current sensing resistors in the compact 2726 and 4026 case sizes to provide an operating temperature range to +275 C. The Vishay Dale WSLT2726 ...
    Discretes · Power » Vishay » WSLT2726, WSLT4026
    22-05-2014
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