High ΔI/Δt current paths on turn-OFF of SiC/GaN FET
| Authors | Andreas Nadler, Eleazar Falco, Emil Nierges |
| Main Document | Article «Auxiliary supply requirements for SiC/GaN gate driver systems» |
| Description | Figure 3: |
| File Format / Size | PDF / 8 Kb |
| Document Language | English |
Other Materials from the Main Document
- Article «Auxiliary supply requirements for SiC/GaN gate driver systems»
- Figure 1:. Overview of a HV half-bridge control of the High-side & Low-side SiC-MOSFET
- Figure 2:. High ΔI/Δt current paths on turn-ON of SiC/GaN FET
- Figure 3:. High ΔI/Δt current paths on turn-OFF of SiC/GaN FET
- Figure 4:. Kelvin connections and critical parasitic inductances in a half-bridge configuration
